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| MP4503 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4503 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm * * * * Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25C) High collector current: IC (DC) = 4 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25C Tc = 25C PT VIsol Tj Tstg DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 5 4 6 0.4 3.0 5.0 W 25 1000 150 -55 to 150 V C C PNP -100 -80 -5 -4 -6 -0.4 Unit V V V A A W JEDEC JEITA TOSHIBA 2-32B1C Weight: 6.0 g (typ.) Array Configuration R1 R2 7 8 9 2 1 11 4 12 5 R1 R2 R1 4.5 k 6 R2 300 1 2002-11-20 MP4503 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25C) Thermal resistance of junction to case (4 devices operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Rth (j-c) 5.0 C/W Symbol Max Unit Rth (j-a) 25 C/W TL 260 C Electrical Characteristics (Ta = 25C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 s Storage time tstg IB1 IB2 Test Condition VCB = 100 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 3 A IC = 3 A, IB = 6 mA IC = 3 A, IB = 6 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 10 Min 0.5 100 80 2000 1000 Typ. 60 30 0.2 Max 20 20 2.5 1.5 2.0 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 1.5 s VCC = 30 V 0.6 Fall time tf IB1 = -IB2 = 6 mA, duty cycle 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 4 A, VBE = -3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1.0 8 Max 4 6 2.0 Unit A A V s C 2 2002-11-20 MP4503 Electrical Characteristics (Ta = 25C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = -100 V, IE = 0 A VCE = -80 V, IB = 0 A VEB = -5 V, IC = 0 A IC = -1 mA, IE = 0 A IC = -10 mA, IB = 0 A VCE = -2 V, IC = -1 A VCE = -2 V, IC = -3 A IC = -3 A, IB = -6 mA IC = -3 A, IB = -6 mA VCE = -2 V, IC = -0.5 A VCB = -10 V, IE = 0 A, f = 1 MHz Min -0.5 -100 -80 2000 1000 Typ. 40 55 0.15 Max -20 -20 -2.5 -1.5 -2.0 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB2 Input 20 s IB2 IB1 Output 10 Switching time Storage time tstg 0.80 s VCC = -30 V Fall time tf -IB1 = IB2 = 6 mA, duty cycle 1% 0.40 Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 4 A, VBE = 3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1.0 8 Max 4 6 2.0 Unit A A V s C 3 2002-11-20 MP4503 IC - VCE 6 Common 5 emitter Tc = 25C 5 1 0.5 6 Common emitter 5 VCE = 2 V IC - VBE (A) IC Collector current 3 Collector current IC 4 (A) 0.3 4 0.23 3 2 IB = 0.2 mA 2 Tc = 100C 1 25 -55 1 0 0 0 1 2 3 4 5 6 7 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 20000 Common emitter 10000 VCE = 2 V 2.4 VCE - IB (V) 2.0 5 1.6 3 1.2 1 0.8 0.3 0.4 Common emitter Tc = 25C 0 0.1 0.3 1 3 10 30 100 300 2 4 IC = 6 A hFE 5000 3000 Tc = 100C DC current gain 25 1000 500 300 0.05 0.1 0.3 -55 0.5 1 3 5 10 Collector current IC (A) Collector-emitter voltage VCE Base current IB (mA) VCE (sat) - IC 10 10 Common emitter 5 3 IC/IB = 500 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 3 Tc = -55C 25 1 100 IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) 1 25 0.5 0.3 0.1 Tc = -55C 100 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 4 2002-11-20 MP4503 IC - VCE -6 Common -5 emitter Tc = 25C -0.5 -0.4 -1.5 -1.0 -6 -0.7 Common emitter -5 VCE = -2 V IC - VBE (A) IC Collector current -3 -0.3 Collector current IC -4 (A) -4 -3 -2 IB = -0.2 mA -2 Tc = 100C -1 0 -1 -2 -3 -4 -5 -6 -7 -1 25 -55 0 0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 20000 Common emitter 10000 VCE = -2 V -2.4 VCE - IB (V) VCE -2.0 hFE 5000 3000 Tc = 100C 25 -55 1000 500 300 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 DC current gain -1.6 -4 -1.2 -1 -0.8 -0.3 -0.4 -2 -3 -5 IC = -6 A Collector-emitter voltage Common emitter 0 -0.1 Tc = 25C -0.3 -1 -3 -10 -30 -100 -300 Collector current IC (A) Base current IB (mA) VCE (sat) - IC -10 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter Common emitter -5 -3 Tc = -55C 25 -1 100 IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) -5 -3 IC/IB = 500 -1 25 -0.5 -0.3 -0.1 Tc = -55C 100 -0.5 -0.3 -0.1 -0.3 -0.5 -1 -3 -5 -10 -0.3 -0.5 -1 -3 -5 -10 Collector current IC (A) Collector current IC (A) 5 2002-11-20 MP4503 Safe Operating Area 10 5 3 10 ms 1 ms IC max (pulsed)* (NPN Tr) -10 -5 100 s -3 Safe Operating Area IC max (pulsed)* (PNP Tr) 10 ms 1 ms 100 s (A) (A) IC Collector current VCEO max 1 0.5 0.3 -1 1 -0.5 -0.3 Collector current IC 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25C 0.01 0.5 Curves must be derated linearly with increase in temperature. 1 3 10 -0.1 -0.05 -0.03 *: Single nonrepetitive pulse Tc = 25C -0.01 -0.5 Curves must be derated linearly with increase in temperature. -1 -3 -10 VCEO max 30 100 300 -30 -100 -300 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) rth - tw 300 (C/W) Curves should be applied in thermal 100 limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (4) rth 30 Transient thermal resistance (3) (2) (1) 10 3 NPN 1 PNP -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Circuit board 100 1000 0.3 0.001 0.01 0.1 1 10 Pulse width tw (s) Tj - PT (C) (1) 120 (2) (3) (4) PT - Ta (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board Junction temperature increase Tj (W) 6 (4) (3) 4 (2) 80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 0 0 2 4 6 8 10 Total power dissipation PT Circuit board (1) 2 0 0 40 80 120 160 200 Total power dissipation PT (W) Ambient temperature Ta (C) 6 2002-11-20 MP4503 Switching Characteristics 30 IB1 = -IB2 = 6 mA Duty cycle 1% Input 20 s IB1 (NPN) 30 Output RL Switching Characteristics -IB1 = IB2 = 6 mA Duty cycle 1% IB2 Input IB2 (PNP) Output RL (s) (s) IB1 IB2 VCC = 30 V IB1 10 IB2 10 IB1 Switching time tstg 1 Switching time 3 3 tstg 20 s VCC = -30 V t t 1 0.3 tf ton 0.3 1 3 10 30 100 0.3 tf ton 0.1 0.1 0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) 7 2002-11-20 MP4503 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2002-11-20 |
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